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| BFY50 MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR Description 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. The BFY50 is a Silicon Planar Epitaxial NPN Transistor in Jedec TO39 metal case. they are intended for general purpose linear and switching applications 5.08 (0.200) typ. 2 1 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 3 45 TO39 PACKAGE Underside View Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VCBO VCEO VEBO IC ICM PTOT Tstg,Tj Rj-case Rj-amb Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current Collector Peak Current Total Power Dissipation @ Tamb 25C @ Tcase 25C Storage and Operatuing Junction Temperature Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient 80V 35V 6V 1A 1.5A 0.8W 5W -65 to 200C 35C / W 218C / W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim.02/00 BFY50 ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter V(BR)CBO* V(BR)CEO* V(BR)EBO* ICBO IEBO VCE(sat) VBE(sat) Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage Test Conditions IC = 100mA IC = 100mA VCB = 60V VEB = 5V IC = 150mA IC = 1A IC = 150mA IC = 1A IC = 10mA IC = 150mA IC = 1mA IE = 0 IB = 0 IE = 100mA IE = 0 TC = 100C IC = 0 TC = 100C IE = 15mA IB = 0.1A IB = 15mA IB = 0.1A VCE = 10V VCE = 10V VCE = 10V Min. 80 35 6 Typ. Max. Unit V 50 2.5 50 2.5 nA mA Collector - Emitter Breakdown Voltage IC = 30mA nA mA 0.14 0.7 0.95 1.5 20 30 15 40 55 30 0.2 1 1.3 2 V V hFE* DC Current Gain -- DYNAMIC CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter hfe hie hrE hoe Test Conditions VCE = 6V VCE = 6V VCE = 5V VCE = 5V VCE = 5V VCB = 5V VCE = 10V IB1= 15mA IC = 1mA IC = 10mA IC = 10mA IC = 10mA IC = 10mA IE = 10mA IC = 50mA VBE = -2V f = 1kHz f = 1KHz f = 1.KHz f = 1.KHz f = 1.KHz f = 1.KHz Min. Typ. 25 45 180 Max. Unit -- W Small Signal Current Gain Imput Impedance Reverse Voltage Ratio Output Admittance Collector -Base Capacitance Transistion Frequency Delay Time Rise Time Storage Time Fall Time 55 x10.6 30 10 60 100 15 40 300 60 -- mS Ccbo fT td tr ts tf pF MHz IC = 150mA VCC = 10V IC = 150mA VCC = 10V IB1= -IB2 = 15mA ns Pulse Duration = 300ms, Duty Cycle = 1% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim.02/00 |
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